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2SB1474 Transistor Power Transistor (-80V, -4A) 2SB1474 !Features 1) Darlington connection for a high hFE. 2) Built-in resistor between base and emitter. 3) Built-in damper doide. !External dimensions (Units : mm) 0.75 5.5 1.5 (3) (2) (1) 2.3 0.9 0.9 0.65 2.3 1.0 0.5 0.5 1.5 2.5 9.5 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCES VEBO IC PC Tj Tstg Limits -80 -80 -7 -4 -6 1 10 150 -55~+150 Unit V V V A(DC) A W W (Tc=25C) ROHM : CPT3 EIAJ : SC-63 * C C * Single pulse, Pw=100ms !Packaging specifications and hFE Type Package hFE Code Basic ordering unit (pieces) 2SB1474 CPT3 1k~10k TL 2500 !Circuit diagram C B R1 R1 3k R2 300 R2 E B : Base C : Collector E : Emitter !Electrical characteristics (Ta=25C) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio Transition frequency Output capacitance Symbol BVCBO BVCEO ICBO IEBO VCE(sat) hFE fT Cob Min. -80 -80 1000 Typ. -1 5000 12 45 Max. -100 -3 -1.5 10000 Unit V V A mA V MHz pF IC=-50A IC=-1mA VCB=-80V VEB=-5V IC/IB=-2A/-4mA VCE/IC=-3V/-2A VCE=-5V, IE=0.5A, f=10MHz VCB=-10V, IE=0A, f=1MHz Conditions *1 *1 *2 *1 Measured using pulse current. *2 Transition frequency of the device. 2.3 !Absolute maximum ratings (Ta=25C) 5.1 6.5 C0.5 0.8Min. (1) Base(Gate) (2) Collector(Drain) (3) Emitter(Source) |
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